APT66F60B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

75 ns

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Drain Current-Max (Abs) (ID) :

66A

Number of Elements :

1

Pin Count :

3

Factory Lead Time :

22 Weeks

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Mount :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Pins :

3

Turn-Off Delay Time :

225 ns

Current - Continuous Drain (Id) @ 25°C :

70A Tc

Gate to Source Voltage (Vgs) :

30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Vgs (Max) :

±30V

Radiation Hardening :

No

Series :

POWER MOS 8™

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Width :

16.26mm

Length :

21.46mm

Case Connection :

DRAIN

Packaging :

Tube

Rise Time :

85ns

Drain to Source Voltage (Vdss) :

600V

Pulsed Drain Current-Max (IDM) :

245A

Package / Case :

TO-247-3 Variant

JESD-609 Code :

e3

Terminal Finish :

PURE MATTE TIN

Published :

1997

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

FET Type :

N-Channel

Continuous Drain Current (ID) :

70A

Rds On (Max) @ Id, Vgs :

90m Ω @ 33A, 10V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Element Material :

SILICON

Power Dissipation-Max :

1135W Tc

Terminal Position :

Single

Fall Time (Typ) :

70 ns

Height :

5.31mm

Input Capacitance (Ciss) (Max) @ Vds :

13190pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)