APT66F60B2
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- Mfr.Part #
- APT66F60B2
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 70A T-MAX
- Stock
- 23,363
- In Stock ：
- 23,363
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain Current-Max (Abs) (ID) :
- 66A
- Drain to Source Voltage (Vdss) :
- 600V
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Factory Lead Time :
- 22 Weeks
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 33A, 10V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- RoHS Compliant
- Pin Count :
- 3
- Vgs (Max) :
- ±30V
- Number of Pins :
- 3
- Number of Elements :
- 1
- Series :
- POWER MOS 8™
- Case Connection :
- DRAIN
- Number of Terminations :
- 3
- Terminal Finish :
- PURE MATTE TIN
- Package / Case :
- TO-247-3 Variant
- DS Breakdown Voltage-Min :
- 600V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Continuous Drain Current (ID) :
- 70A
- Turn On Delay Time :
- 75 ns
- Fall Time (Typ) :
- 70 ns
- JESD-609 Code :
- e3
- Turn-Off Delay Time :
- 225 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 13190pF @ 25V
- Radiation Hardening :
- No
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- Power Dissipation-Max :
- 1135W Tc
- Published :
- 1997
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pbfree Code :
- yes
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 30V
- Height :
- 5.31mm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Length :
- 21.46mm
- Rise Time :
- 85ns
- Width :
- 16.26mm
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Terminal Position :
- Single
- Pulsed Drain Current-Max (IDM) :
- 245A
- Datasheets
- APT66F60B2
N-Channel Tube 90m Ω @ 33A, 10V ±30V 13190pF @ 25V 330nC @ 10V 600V TO-247-3 Variant
APT66F60B2 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 13190pF @ 25V.This device conducts a continuous drain current (ID) of 70A, which is the maximum continuous current transistor can conduct.The drain current is the maximum continuous current this device can conduct, which is 66A.When the device is turned off, a turn-off delay time of 225 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 245A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 75 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.A normal operation of the DS requires keeping the breakdown voltage above 600V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT66F60B2 Features
a continuous drain current (ID) of 70A
the turn-off delay time is 225 ns
based on its rated peak drain current 245A.
a 600V drain to source voltage (Vdss)
APT66F60B2 Applications
There are a lot of Microsemi Corporation
APT66F60B2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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