APT60M80L2VRG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

POWER MOS V®

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

13300pF @ 25V

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Terminal Finish :

TIN SILVER COPPER

Gate Charge (Qg) (Max) @ Vgs :

590nC @ 10V

Pbfree Code :

yes

Drain-source On Resistance-Max :

0.08Ohm

Power Dissipation-Max :

833W Tc

Pulsed Drain Current-Max (IDM) :

260A

Rise Time :

24ns

Packaging :

Tube

Vgs (Max) :

±30V

Published :

1997

Turn On Delay Time :

14 ns

Fall Time (Typ) :

31 ns

Current Rating :

65A

Mount :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 5mA

Pin Count :

3

Number of Elements :

1

JESD-609 Code :

e1

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Voltage - Rated DC :

600V

Package / Case :

TO-264-3, TO-264AA

Current - Continuous Drain (Id) @ 25°C :

65A Tc

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Gate to Source Voltage (Vgs) :

30V

Turn-Off Delay Time :

70 ns

Case Connection :

DRAIN

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Power Dissipation :

833W

Continuous Drain Current (ID) :

65A

Rds On (Max) @ Id, Vgs :

80m Ω @ 32.5A, 10V

Number of Terminations :

3