APT60M80L2VRG
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- Mfr.Part #
- APT60M80L2VRG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 65A 264 MAX
- Stock
- 42,116
- In Stock ：
- 42,116
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Pbfree Code :
- yes
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Packaging :
- Tube
- Transistor Application :
- SWITCHING
- Series :
- POWER MOS V®
- Current Rating :
- 65A
- JESD-609 Code :
- e1
- Input Capacitance (Ciss) (Max) @ Vds :
- 13300pF @ 25V
- Pin Count :
- 3
- Package / Case :
- TO-264-3, TO-264AA
- Lead Free :
- Lead Free
- Gate to Source Voltage (Vgs) :
- 30V
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 70 ns
- Number of Pins :
- 3
- Turn On Delay Time :
- 14 ns
- Voltage - Rated DC :
- 600V
- Case Connection :
- DRAIN
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- Terminal Finish :
- TIN SILVER COPPER
- Terminal Position :
- Single
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 65A
- Rds On (Max) @ Id, Vgs :
- 80m Ω @ 32.5A, 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Fall Time (Typ) :
- 31 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- Published :
- 1997
- Vgs (Max) :
- ±30V
- RoHS Status :
- RoHS Compliant
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 833W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 65A Tc
- Operating Temperature :
- -55°C~150°C TJ
- Drain-source On Resistance-Max :
- 0.08Ohm
- Rise Time :
- 24ns
- Pulsed Drain Current-Max (IDM) :
- 260A
- Power Dissipation :
- 833W
- Number of Terminations :
- 3
- Additional Feature :
- AVALANCHE RATED
- Gate Charge (Qg) (Max) @ Vgs :
- 590nC @ 10V
- Datasheets
- APT60M80L2VRG
N-Channel Tube 80m Ω @ 32.5A, 10V ±30V 13300pF @ 25V 590nC @ 10V TO-264-3, TO-264AA
APT60M80L2VRG Overview
A device's maximum input capacitance is 13300pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 65A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 260A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT60M80L2VRG Features
a continuous drain current (ID) of 65A
the turn-off delay time is 70 ns
based on its rated peak drain current 260A.
APT60M80L2VRG Applications
There are a lot of Microsemi Corporation
APT60M80L2VRG applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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