APT60M75JVR
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- Mfr.Part #
- APT60M75JVR
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 62A ISOTOP
- Stock
- 48,915
- In Stock ：
- 48,915
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 20ns
- Case Connection :
- Isolated
- Continuous Drain Current (ID) :
- 62A
- Gate Charge (Qg) (Max) @ Vgs :
- 1050nC @ 10V
- Lead Free :
- Lead Free
- Terminal Position :
- UPPER
- Turn-Off Delay Time :
- 80 ns
- Radiation Hardening :
- No
- Gate to Source Voltage (Vgs) :
- 30V
- Voltage - Rated DC :
- 600V
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Mount :
- Chassis Mount, Screw
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Pin Count :
- 4
- Operating Mode :
- ENHANCEMENT MODE
- Package / Case :
- SOT-227-4, miniBLOC
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 700W
- Published :
- 1997
- Number of Pins :
- 4
- FET Type :
- N-Channel
- Vgs (Max) :
- ±30V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn On Delay Time :
- 20 ns
- Packaging :
- Tube
- Fall Time (Typ) :
- 12 ns
- Terminal Form :
- UNSPECIFIED
- Operating Temperature :
- -55°C~150°C TJ
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- Current Rating :
- 62A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 31 Weeks
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 19800pF @ 25V
- Number of Terminations :
- 4
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 500mA, 10V
- Drain-source On Resistance-Max :
- 0.075Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Additional Feature :
- High Voltage
- Transistor Element Material :
- SILICON
- Series :
- POWER MOS V®
- Pbfree Code :
- yes
- Power Dissipation-Max :
- 700W Tc
- Mounting Type :
- Chassis Mount
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- Datasheets
- APT60M75JVR
N-Channel Tube 75m Ω @ 500mA, 10V ±30V 19800pF @ 25V 1050nC @ 10V SOT-227-4, miniBLOC
APT60M75JVR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3600 mJ.A device's maximum input capacitance is 19800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 62A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT60M75JVR Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 62A
the turn-off delay time is 80 ns
APT60M75JVR Applications
There are a lot of Microsemi Corporation
APT60M75JVR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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