APT60M75JVR
- Mfr.Part #
- APT60M75JVR
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 62A ISOTOP
- Stock
- 48,915
- In Stock :
- 48,915
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs (Max) :
- ±30V
- Voltage - Rated DC :
- 600V
- Current Rating :
- 62A
- Gate to Source Voltage (Vgs) :
- 30V
- Mounting Type :
- Chassis Mount
- Fall Time (Typ) :
- 12 ns
- Power Dissipation-Max :
- 700W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 700W
- Mount :
- Chassis Mount, Screw
- Published :
- 1997
- Radiation Hardening :
- No
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- Drain-source On Resistance-Max :
- 0.075Ohm
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 62A
- Turn-Off Delay Time :
- 80 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 19800pF @ 25V
- Pin Count :
- 4
- Package / Case :
- SOT-227-4, miniBLOC
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 62A Tc
- Transistor Application :
- SWITCHING
- Turn On Delay Time :
- 20 ns
- Terminal Position :
- UPPER
- Terminal Form :
- UNSPECIFIED
- Series :
- POWER MOS V®
- Lead Free :
- Lead Free
- RoHS Status :
- RoHS Compliant
- Number of Terminations :
- 4
- Pbfree Code :
- yes
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- Additional Feature :
- High Voltage
- Case Connection :
- Isolated
- Operating Mode :
- ENHANCEMENT MODE
- Gate Charge (Qg) (Max) @ Vgs :
- 1050nC @ 10V
- Factory Lead Time :
- 31 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 500mA, 10V
- Packaging :
- Tube
- Rise Time :
- 20ns
- Number of Pins :
- 4
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Datasheets
- APT60M75JVR

N-Channel Tube 75m Ω @ 500mA, 10V ±30V 19800pF @ 25V 1050nC @ 10V SOT-227-4, miniBLOC
APT60M75JVR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3600 mJ.A device's maximum input capacitance is 19800pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 62A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 80 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 20 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT60M75JVR Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 62A
the turn-off delay time is 80 ns
APT60M75JVR Applications
There are a lot of Microsemi Corporation
APT60M75JVR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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