APT60M75JVFR

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

62A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Radiation Hardening :

No

Series :

POWER MOS V®

Number of Elements :

1

Pbfree Code :

yes

Lead Free :

Lead Free

Terminal Form :

UNSPECIFIED

Packaging :

Tube

Continuous Drain Current (ID) :

62A

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Power Dissipation :

700W

Avalanche Energy Rating (Eas) :

3600 mJ

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

600V

Additional Feature :

AVALANCHE ENERGY RATED

Vgs(th) (Max) @ Id :

4V @ 5mA

Mount :

Chassis Mount, Screw

Gate to Source Voltage (Vgs) :

30V

Rds On (Max) @ Id, Vgs :

75m Ω @ 31A, 10V

Package / Case :

SOT-227-4, miniBLOC

Number of Terminations :

4

Gate Charge (Qg) (Max) @ Vgs :

1050nC @ 10V

Current Rating :

62A

Published :

1997

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

19800pF @ 25V

RoHS Status :

RoHS Compliant

Number of Pins :

4

Power Dissipation-Max :

700W Tc

Drain-source On Resistance-Max :

0.075Ohm

Terminal Position :

UPPER

Pin Count :

4

Case Connection :

Isolated