APT60M75JLL
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- Mfr.Part #
- APT60M75JLL
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 58A ISOTOP
- Stock
- 14,822
- In Stock ：
- 14,822
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Continuous Drain Current (ID) :
- 58A
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Mount :
- Chassis Mount, Screw
- RoHS Status :
- RoHS Compliant
- Drain-source On Resistance-Max :
- 0.075Ohm
- Gate to Source Voltage (Vgs) :
- 30V
- Series :
- POWER MOS 7®
- Turn-Off Delay Time :
- 55 ns
- Pin Count :
- 4
- Terminal Position :
- UPPER
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 8930pF @ 25V
- Case Connection :
- Isolated
- Rise Time :
- 15ns
- Vgs (Max) :
- ±30V
- Transistor Element Material :
- SILICON
- Package / Case :
- SOT-227-4, miniBLOC
- Turn On Delay Time :
- 23 ns
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 600V
- Avalanche Energy Rating (Eas) :
- 3200 mJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Gate Charge (Qg) (Max) @ Vgs :
- 195nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Lead Free :
- Lead Free
- Power Dissipation-Max :
- 595W Tc
- Mounting Type :
- Chassis Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Rds On (Max) @ Id, Vgs :
- 75m Ω @ 29A, 10V
- Published :
- 1997
- Terminal Form :
- UNSPECIFIED
- Current Rating :
- 58A
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Additional Feature :
- UL RECOGNIZED
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 10 ns
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 4
- Factory Lead Time :
- 31 Weeks
- Packaging :
- Tube
- Number of Elements :
- 1
- Radiation Hardening :
- No
- Pulsed Drain Current-Max (IDM) :
- 232A
- Number of Pins :
- 4
- Datasheets
- APT60M75JLL
N-Channel Tube 75m Ω @ 29A, 10V ±30V 8930pF @ 25V 195nC @ 10V SOT-227-4, miniBLOC
APT60M75JLL Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 3200 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8930pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 58A amps.It is [55 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 232A.A turn-on delay time of 23 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.A device like this reduces its overall power consumption when it uses drive voltage (10V).
APT60M75JLL Features
the avalanche energy rating (Eas) is 3200 mJ
a continuous drain current (ID) of 58A
the turn-off delay time is 55 ns
based on its rated peak drain current 232A.
APT60M75JLL Applications
There are a lot of Microsemi Corporation
APT60M75JLL applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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