APT60M60JLL
- Mfr.Part #
- APT60M60JLL
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 70A ISOTOP
- Stock
- 15,573
- In Stock :
- 15,573
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 21 ns
- Pulsed Drain Current-Max (IDM) :
- 280A
- Power Dissipation :
- 694W
- Number of Elements :
- 1
- Current Rating :
- 70A
- Turn-Off Delay Time :
- 51 ns
- Case Connection :
- Isolated
- Transistor Element Material :
- SILICON
- Current - Continuous Drain (Id) @ 25°C :
- 70A Tc
- Mounting Type :
- Chassis Mount
- Fall Time (Typ) :
- 12 ns
- Rise Time :
- 16ns
- Pin Count :
- 4
- Gate Charge (Qg) (Max) @ Vgs :
- 289nC @ 10V
- RoHS Status :
- RoHS Compliant
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 60m Ω @ 35A, 10V
- Voltage - Rated DC :
- 600V
- Packaging :
- Tube
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- FET Type :
- N-Channel
- Package / Case :
- SOT-227-4, miniBLOC
- Terminal Position :
- UPPER
- Additional Feature :
- UL RECOGNIZED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- SWITCHING
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 5mA
- Gate to Source Voltage (Vgs) :
- 30V
- Power Dissipation-Max :
- 694W Tc
- Drain-source On Resistance-Max :
- 0.06Ohm
- Factory Lead Time :
- 31 Weeks
- Terminal Form :
- UNSPECIFIED
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 12630pF @ 25V
- Mount :
- Chassis Mount, Screw
- Series :
- POWER MOS 7®
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- Continuous Drain Current (ID) :
- 70A
- Number of Pins :
- 4
- Datasheets
- APT60M60JLL

N-Channel Tube 60m Ω @ 35A, 10V ±30V 12630pF @ 25V 289nC @ 10V SOT-227-4, miniBLOC
APT60M60JLL Overview
Single MOSFETs transistor is called "avalanche break down", and avalanche energy is applied to MOSFETs, and Single MOSFETs transistor has a rating of 3600 mJ.With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 12630pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 70A.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 51 ns.Peak drain current for this device is 280A, which is its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 21 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Using drive voltage (10V) reduces this device's overall power consumption.
APT60M60JLL Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 70A
the turn-off delay time is 51 ns
based on its rated peak drain current 280A.
APT60M60JLL Applications
There are a lot of Microsemi Corporation
APT60M60JLL applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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