APT6040BNG

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Feedback Cap-Max (Crss) :

230 pF

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Number of Elements :

1

Drain-source On Resistance-Max :

0.4Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 1mA

Series :

POWER MOS IV®

Surface Mount :

yes

Package / Case :

TO-247-3

Power Dissipation-Max :

310W Tc

Packaging :

Tube

Terminal Form :

Gull wing

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

72A

Turn Off Time-Max (toff) :

141ns

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Number of Terminations :

3

Rds On (Max) @ Id, Vgs :

400m Ω @ 9A, 10V

Drain to Source Voltage (Vdss) :

600V

Qualification Status :

Not Qualified

Turn On Time-Max (ton) :

74ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

DS Breakdown Voltage-Min :

600V

Drain Current-Max (Abs) (ID) :

18A

Pin Count :

3

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSFM-G3

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V