APT6040BN

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Through Hole

Packaging :

Tube

Drain-source On Resistance-Max :

0.4Ohm

Configuration :

SINGLE WITH BUILT-IN DIODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

2950pF @ 25V

Drain Current-Max (Abs) (ID) :

18A

DS Breakdown Voltage-Min :

600V

Surface Mount :

No

Case Connection :

DRAIN

Vgs (Max) :

±30V

Rds On (Max) @ Id, Vgs :

400m Ω @ 9A, 10V

Qualification Status :

Not Qualified

Power Dissipation-Max :

310W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs(th) (Max) @ Id :

4V @ 1mA

FET Type :

N-Channel

Number of Terminations :

3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-247-3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pbfree Code :

No

JEDEC-95 Code :

TO-247AD

Pulsed Drain Current-Max (IDM) :

72A

Gate Charge (Qg) (Max) @ Vgs :

130nC @ 10V

JESD-30 Code :

R-PSFM-T3

Series :

POWER MOS IV®

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Terminal Position :

Single