APT6030BN

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Time-Max (ton) :

110ns

Input Capacitance (Ciss) (Max) @ Vds :

3500pF @ 25V

Qualification Status :

Not Qualified

FET Type :

N-Channel

Terminal Finish :

Tin/Lead (Sn/Pb)

Drive Voltage (Max Rds On,Min Rds On) :

10V

JESD-609 Code :

e0

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

No

Rds On (Max) @ Id, Vgs :

300m Ω @ 11.5A, 10V

Package / Case :

TO-247-3

Power Dissipation-Max :

360W Tc

Number of Terminations :

3

Turn Off Time-Max (toff) :

230ns

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4V @ 1mA

Terminal Position :

Single

DS Breakdown Voltage-Min :

600V

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Transistor Element Material :

SILICON

Series :

POWER MOS IV®

Drain-source On Resistance-Max :

0.3Ohm

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Operating Temperature :

-55°C~150°C TJ

RoHS Status :

Non-RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain to Source Voltage (Vdss) :

600V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

92A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

23A

Feedback Cap-Max (Crss) :

285 pF

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-247AD

Number of Elements :

1