APT4M120K

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1385pF @ 25V

Power Dissipation :

225W

Weight :

6.000006g

Drain-source On Resistance-Max :

3.8Ohm

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Rise Time :

4.4ns

Operating Temperature :

-55°C~150°C TJ

Factory Lead Time :

17 Weeks

Drain to Source Breakdown Voltage :

1.2kV

Package / Case :

TO-220-3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Voltage - Rated DC :

1.2kV

Terminal Position :

Single

Width :

4.72mm

Fall Time (Typ) :

6.9 ns

Turn On Delay Time :

7.4 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

225W Tc

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

1200V

Height :

9.19mm

Turn-Off Delay Time :

24 ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Case Connection :

DRAIN

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

3

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

5A

RoHS Status :

RoHS Compliant

Pbfree Code :

yes

Current Rating :

4A

Packaging :

Tube

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 1mA

Current - Continuous Drain (Id) @ 25°C :

5A Tc

Vgs (Max) :

±30V

Radiation Hardening :

No

Pin Count :

3

Gate to Source Voltage (Vgs) :

30V

JEDEC-95 Code :

TO-220AB

Mounting Type :

Through Hole

Terminal Finish :

Pure Matte Tin (Sn)

Number of Elements :

1

Length :

10.26mm

JESD-30 Code :

R-PSFM-T3

Continuous Drain Current (ID) :

5A

Rds On (Max) @ Id, Vgs :

4 Ω @ 2A, 10V

Transistor Application :

SWITCHING