APT48M80B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

1135W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

49A Tc

RoHS Status :

RoHS Compliant

JEDEC-95 Code :

TO-247AB

Gate Charge (Qg) (Max) @ Vgs :

305nC @ 10V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Input Capacitance (Ciss) (Max) @ Vds :

9330pF @ 25V

Package / Case :

TO-247-3 Variant

Drain-source On Resistance-Max :

0.2Ohm

Transistor Element Material :

SILICON

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lead Free :

Lead Free

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Turn On Delay Time :

55 ns

Case Connection :

DRAIN

Rise Time :

75ns

Additional Feature :

FAST SWITCHING, AVALANCHE RATED

Rds On (Max) @ Id, Vgs :

190m Ω @ 24A, 10V

Pbfree Code :

yes

JESD-30 Code :

R-PSFM-T3

Voltage - Rated DC :

800V

Vgs (Max) :

±30V

Series :

POWER MOS 8™

Turn-Off Delay Time :

230 ns

Packaging :

Tube

Terminal Position :

Single

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Radiation Hardening :

No

Continuous Drain Current (ID) :

49A

Mount :

Through Hole

Transistor Application :

SWITCHING

Mounting Type :

Through Hole

Fall Time (Typ) :

70 ns

Factory Lead Time :

29 Weeks

Current Rating :

48A

Number of Terminations :

3

Configuration :

SINGLE WITH BUILT-IN DIODE

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Published :

1997

FET Type :

N-Channel

Terminal Finish :

PURE MATTE TIN