APT47F60J

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

85ns

Input Capacitance (Ciss) (Max) @ Vds :

13190pF @ 25V

Published :

1997

Additional Feature :

AVALANCHE RATED, UL RECOGNIZED

Radiation Hardening :

No

Vgs (Max) :

±30V

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Drain-source On Resistance-Max :

0.09Ohm

Number of Pins :

4

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Case Connection :

Isolated

Fall Time (Typ) :

70 ns

Continuous Drain Current (ID) :

49A

Gate to Source Voltage (Vgs) :

30V

Drain to Source Voltage (Vdss) :

600V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Turn-Off Delay Time :

225 ns

Terminal Position :

UPPER

Power Dissipation :

540W

Transistor Element Material :

SILICON

Packaging :

Tube

RoHS Status :

RoHS Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Pbfree Code :

yes

Series :

POWER MOS 8™

Factory Lead Time :

22 Weeks

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

540W Tc

Number of Terminations :

4

Mount :

Chassis Mount, Screw

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Package / Case :

SOT-227-4, miniBLOC

Rds On (Max) @ Id, Vgs :

90m Ω @ 33A, 10V

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

75 ns

Pin Count :

4

FET Type :

N-Channel

Mounting Type :

Chassis Mount