APT43M60B2

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Packaging :

Tube

Gate to Source Voltage (Vgs) :

30V

Drain to Source Breakdown Voltage :

600V

Terminal Position :

Single

Pin Count :

3

Vgs (Max) :

±30V

Turn-Off Delay Time :

145 ns

Turn On Delay Time :

48 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Factory Lead Time :

19 Weeks

Mounting Type :

Through Hole

Series :

POWER MOS 8™

Pbfree Code :

yes

Number of Elements :

1

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

21.46mm

Rds On (Max) @ Id, Vgs :

150m Ω @ 21A, 10V

Rise Time :

55ns

Case Connection :

DRAIN

Power Dissipation :

780W

Fall Time (Typ) :

44 ns

RoHS Status :

RoHS Compliant

Width :

16.26mm

Weight :

38.000013g

Published :

1997

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

45A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Terminal Finish :

PURE MATTE TIN

Number of Terminations :

3

Transistor Element Material :

SILICON

Power Dissipation-Max :

780W Tc

JESD-30 Code :

R-PSIP-T3

Radiation Hardening :

No

Height :

5.31mm

Voltage - Rated DC :

600V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

8590pF @ 25V

Package / Case :

TO-247-3 Variant

FET Type :

N-Channel

Current Rating :

43A