APT43F60L

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

29 Weeks

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSFM-T3

Series :

POWER MOS 8™

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

780W Tc

Turn-Off Delay Time :

145 ns

Drain to Source Voltage (Vdss) :

600V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Application :

SWITCHING

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

45A Tc

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Number of Terminations :

3

Fall Time (Typ) :

44 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Through Hole

Terminal Position :

Single

Rise Time :

55ns

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

150m Ω @ 21A, 10V

Packaging :

Tube

Package / Case :

TO-264-3, TO-264AA

RoHS Status :

RoHS Compliant

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Finish :

PURE MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

8590pF @ 25V

Continuous Drain Current (ID) :

45A

DS Breakdown Voltage-Min :

600V

Power Dissipation :

780W

Mounting Type :

Through Hole

Case Connection :

DRAIN

Published :

1997

Turn On Delay Time :

48 ns

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

215nC @ 10V

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e3