APT42F50S

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

26 ns

Terminal Position :

Single

RoHS Status :

RoHS Compliant

Radiation Hardening :

No

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Transistor Element Material :

SILICON

Lifecycle Status :

IN PRODUCTION (Last Updated: 3 weeks ago)

Time@Peak Reflow Temperature-Max (s) :

30

Rise Time :

35ns

Drain to Source Voltage (Vdss) :

500V

Series :

POWER MOS 8™

Turn On Delay Time :

29 ns

Number of Terminations :

2

FET Type :

N-Channel

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5V @ 1mA

Peak Reflow Temperature (Cel) :

245

Terminal Form :

Gull wing

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

130m Ω @ 21A, 10V

Pin Count :

3

Mounting Type :

Surface Mount

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Operating Mode :

ENHANCEMENT MODE

Power Dissipation-Max :

625W Tc

Vgs (Max) :

±30V

Case Connection :

DRAIN

Terminal Finish :

PURE MATTE TIN

Pbfree Code :

yes

Transistor Application :

SWITCHING

Turn-Off Delay Time :

80 ns

Factory Lead Time :

23 Weeks

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Input Capacitance (Ciss) (Max) @ Vds :

6810pF @ 25V

Published :

1997

Mount :

Surface Mount

Continuous Drain Current (ID) :

42A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

DS Breakdown Voltage-Min :

500V

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~150°C TJ