APT42F50B

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

26 ns

Voltage - Rated DC :

500V

Mounting Type :

Through Hole

Radiation Hardening :

No

Package / Case :

TO-247-3

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

130m Ω @ 21A, 10V

Continuous Drain Current (ID) :

42A

Length :

21.46mm

Case Connection :

DRAIN

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Pin Count :

3

Pbfree Code :

yes

Lifecycle Status :

IN PRODUCTION (Last Updated: 1 month ago)

Current - Continuous Drain (Id) @ 25°C :

42A Tc

Width :

16.26mm

Vgs(th) (Max) @ Id :

5V @ 1mA

JESD-30 Code :

R-PSFM-T3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Elements :

1

Published :

1997

Vgs (Max) :

±30V

FET Type :

N-Channel

Height :

5.31mm

Input Capacitance (Ciss) (Max) @ Vds :

6810pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN SILVER COPPER

Transistor Element Material :

SILICON

Current Rating :

42A

Weight :

38.000013g

Avalanche Energy Rating (Eas) :

930 mJ

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

22 Weeks

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Series :

POWER MOS 8™

Turn-Off Delay Time :

80 ns

Terminal Position :

Single

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Packaging :

Tube

Mount :

Through Hole

Turn On Delay Time :

29 ns

Power Dissipation-Max :

625W Tc

Number of Terminations :

3

Power Dissipation :

625W

Gate Charge (Qg) (Max) @ Vgs :

170nC @ 10V

Rise Time :

35ns