APT41M80B2
- Mfr.Part #
- APT41M80B2
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 43A T-MAX
- Stock
- 28,358
- In Stock :
- 28,358
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 200 ns
- Continuous Drain Current (ID) :
- 43A
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Packaging :
- Tube
- Published :
- 1997
- Gate to Source Voltage (Vgs) :
- 30V
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- RoHS Compliant
- JESD-30 Code :
- R-PSIP-T3
- Transistor Element Material :
- SILICON
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY
- Rds On (Max) @ Id, Vgs :
- 210m Ω @ 20A, 10V
- Factory Lead Time :
- 29 Weeks
- Series :
- POWER MOS 8™
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 4 weeks ago)
- Rise Time :
- 65ns
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Gate Charge (Qg) (Max) @ Vgs :
- 260nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Number of Terminations :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 8070pF @ 25V
- Package / Case :
- TO-247-3 Variant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e3
- Terminal Finish :
- PURE MATTE TIN
- Terminal Position :
- Single
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-247AD
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 800V
- Fall Time (Typ) :
- 60 ns
- Vgs (Max) :
- ±30V
- Current Rating :
- 41A
- Power Dissipation-Max :
- 1040W Tc
- Power Dissipation :
- 1.04kW
- Turn On Delay Time :
- 46 ns
- Radiation Hardening :
- No
- Datasheets
- APT41M80B2
N-Channel Tube 210m Ω @ 20A, 10V ±30V 8070pF @ 25V 260nC @ 10V TO-247-3 Variant
APT41M80B2 Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8070pF @ 25V.This device conducts a continuous drain current (ID) of 43A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 200 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 46 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT41M80B2 Features
a continuous drain current (ID) of 43A
the turn-off delay time is 200 ns
APT41M80B2 Applications
There are a lot of Microsemi Corporation
APT41M80B2 applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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