APT40M70JVFR
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- Mfr.Part #
- APT40M70JVFR
- Manufacturer
- Microsemi
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 53A ISOTOP
- Stock
- 49,370
- In Stock ：
- 49,370
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 8890pF @ 25V
- Mounting Type :
- Chassis Mount
- Packaging :
- Tube
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation :
- 450W
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 26.5A, 10V
- Current Rating :
- 53A
- Gate to Source Voltage (Vgs) :
- 30V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 5 ns
- Operating Mode :
- ENHANCEMENT MODE
- Turn On Delay Time :
- 16 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 495nC @ 10V
- Continuous Drain Current (ID) :
- 53A
- Current - Continuous Drain (Id) @ 25°C :
- 53A Tc
- JESD-609 Code :
- e1
- FET Type :
- N-Channel
- Published :
- 1997
- Voltage - Rated DC :
- 400V
- Vgs (Max) :
- ±30V
- Package / Case :
- SOT-227-4, miniBLOC
- Pbfree Code :
- yes
- Number of Terminations :
- 4
- Terminal Position :
- UPPER
- Turn-Off Delay Time :
- 54 ns
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Drain-source On Resistance-Max :
- 0.07Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Chassis Mount, Screw
- Transistor Application :
- SWITCHING
- Pin Count :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Case Connection :
- Isolated
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- UNSPECIFIED
- Number of Pins :
- 4
- Avalanche Energy Rating (Eas) :
- 2500 mJ
- Rise Time :
- 16ns
- Series :
- POWER MOS V®
- Additional Feature :
- AVALANCHE RATED
- Power Dissipation-Max :
- 450W Tc
- Datasheets
- APT40M70JVFR
N-Channel Tube 70m Ω @ 26.5A, 10V ±30V 8890pF @ 25V 495nC @ 10V SOT-227-4, miniBLOC
APT40M70JVFR Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 2500 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 8890pF @ 25V.This device conducts a continuous drain current (ID) of 53A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 54 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 16 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
APT40M70JVFR Features
the avalanche energy rating (Eas) is 2500 mJ
a continuous drain current (ID) of 53A
the turn-off delay time is 54 ns
APT40M70JVFR Applications
There are a lot of Microsemi Corporation
APT40M70JVFR applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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