APT40M35JVFR
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- Mfr.Part #
- APT40M35JVFR
- Manufacturer
- Microsemi
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 400V 93A ISOTOP
- Stock
- 40,760
- In Stock ：
- 40,760
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- Manufacturer :
- Microsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Terminations :
- 4
- Pulsed Drain Current-Max (IDM) :
- 372A
- Package / Case :
- SOT-227-4, miniBLOC
- Turn On Delay Time :
- 20 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rise Time :
- 30ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 20160pF @ 25V
- Rds On (Max) @ Id, Vgs :
- 35m Ω @ 46.5A, 10V
- Factory Lead Time :
- 22 Weeks
- Series :
- POWER MOS V®
- JESD-609 Code :
- e1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Case Connection :
- Isolated
- Fall Time (Typ) :
- 14 ns
- Turn-Off Delay Time :
- 75 ns
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- Power Dissipation-Max :
- 700W Tc
- Packaging :
- Tube
- Continuous Drain Current (ID) :
- 93A
- Published :
- 1997
- Current - Continuous Drain (Id) @ 25°C :
- 93A Tc
- Power Dissipation :
- 700W
- Terminal Position :
- UPPER
- Additional Feature :
- AVALANCHE RATED
- Pin Count :
- 4
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Operating Mode :
- ENHANCEMENT MODE
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Mounting Type :
- Chassis Mount
- Current Rating :
- 93A
- Gate to Source Voltage (Vgs) :
- 30V
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 1065nC @ 10V
- Vgs (Max) :
- ±30V
- Operating Temperature :
- -55°C~150°C TJ
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- Number of Pins :
- 4
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 400V
- Drain-source On Resistance-Max :
- 0.035Ohm
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Mount :
- Chassis Mount, Screw
- Lead Free :
- Lead Free
- Terminal Form :
- UNSPECIFIED
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- APT40M35JVFR
N-Channel Tube 35m Ω @ 46.5A, 10V ±30V 20160pF @ 25V 1065nC @ 10V SOT-227-4, miniBLOC
APT40M35JVFR Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 3600 mJ.The maximum input capacitance of this device is 20160pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 93A.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 75 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 372A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 20 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
APT40M35JVFR Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 93A
the turn-off delay time is 75 ns
based on its rated peak drain current 372A.
APT40M35JVFR Applications
There are a lot of Microsemi Corporation
APT40M35JVFR applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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