APT38N60BC6
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- Mfr.Part #
- APT38N60BC6
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 38A TO247
- Stock
- 1,241
- In Stock ：
- 1,241
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 5.31mm
- Rds On (Max) @ Id, Vgs :
- 99m Ω @ 18A, 10V
- Weight :
- 38.000013g
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 2826pF @ 25V
- Avalanche Energy Rating (Eas) :
- 796 mJ
- Packaging :
- Tube
- Number of Elements :
- 1
- FET Type :
- N-Channel
- Case Connection :
- DRAIN
- Vgs(th) (Max) @ Id :
- 3.5V @ 1.2mA
- Length :
- 21.46mm
- Vgs (Max) :
- ±20V
- Additional Feature :
- AVALANCHE RATED, ULTRA LOW RESISTANCE
- Lead Free :
- Lead Free
- Fall Time (Typ) :
- 69 ns
- Turn-Off Delay Time :
- 118 ns
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 1997
- Radiation Hardening :
- No
- Factory Lead Time :
- 24 Weeks
- Terminal Position :
- Single
- Lifecycle Status :
- IN PRODUCTION (Last Updated: 1 month ago)
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 600V
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 29ns
- Continuous Drain Current (ID) :
- 38A
- Turn On Delay Time :
- 14 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 112nC @ 10V
- Number of Terminations :
- 3
- JESD-30 Code :
- R-PSFM-T3
- Current - Continuous Drain (Id) @ 25°C :
- 38A Tc
- Power Dissipation :
- 278W
- Drain-source On Resistance-Max :
- 0.099Ohm
- Package / Case :
- TO-247-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation-Max :
- 278W Tc
- RoHS Status :
- RoHS Compliant
- Transistor Element Material :
- SILICON
- DS Breakdown Voltage-Min :
- 600V
- Series :
- CoolMOS™
- Width :
- 16.26mm
- Mounting Type :
- Through Hole
- Datasheets
- APT38N60BC6
N-Channel Tube 99m Ω @ 18A, 10V ±20V 2826pF @ 25V 112nC @ 10V 600V TO-247-3
APT38N60BC6 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 796 mJ.A device's maximum input capacitance is 2826pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 38A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 118 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 14 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.For normal operation, maintain the DS breakdown voltage above 600V.To operate this transistor, you need to apply a 600V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
APT38N60BC6 Features
the avalanche energy rating (Eas) is 796 mJ
a continuous drain current (ID) of 38A
the turn-off delay time is 118 ns
a 600V drain to source voltage (Vdss)
APT38N60BC6 Applications
There are a lot of Microsemi Corporation
APT38N60BC6 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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