APT35GP120BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

3.9V

RoHS Status :

RoHS Compliant

Test Condition :

600V, 35A, 5 Ω, 15V

Mount :

Through Hole

Published :

1999

Lead Free :

Lead Free

Additional Feature :

ULTRA FAST, LOW CONDUCTION LOSS

Gate-Emitter Voltage-Max :

20V

Voltage - Rated DC :

1.2kV

Switching Energy :

750μJ (on), 680μJ (off)

Factory Lead Time :

23 Weeks

Pin Count :

3

Gate-Emitter Thr Voltage-Max :

6V

Number of Terminations :

3

Input Type :

Standard

IGBT Type :

PT

Td (on/off) @ 25°C :

16ns/94ns

Turn On Time :

36 ns

Vce(on) (Max) @ Vge, Ic :

3.9V @ 15V, 35A

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Current Rating :

96A

Element Configuration :

Single

Series :

POWER MOS 7®

Mounting Type :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pbfree Code :

yes

Number of Elements :

1

Package / Case :

TO-247-3

Transistor Application :

POWER CONTROL

Voltage - Collector Emitter Breakdown (Max) :

1200V

Number of Pins :

3

Current - Collector Pulsed (Icm) :

140A

JEDEC-95 Code :

TO-247AD

Gate Charge :

150nC

Collector Emitter Breakdown Voltage :

1.2kV

Turn Off Time-Nom (toff) :

222 ns

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Radiation Hardening :

No

Max Collector Current :

96A

JESD-609 Code :

e1

Packaging :

Tube

Case Connection :

COLLECTOR

Max Power Dissipation :

543W