APT35GP120B2DQ2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Element Configuration :

Single

Pbfree Code :

yes

Number of Terminations :

3

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

TO-247-3 Variant

Published :

1999

Current Rating :

96A

Operating Temperature :

-55°C~150°C TJ

Mount :

Through Hole

IGBT Type :

PT

Case Connection :

COLLECTOR

Turn Off Time-Nom (toff) :

220 ns

Number of Elements :

1

Number of Pins :

3

Max Power Dissipation :

543W

Collector Emitter Voltage (VCEO) :

1.2kV

Additional Feature :

LOW CONDUCTION LOSS

Voltage - Rated DC :

1.2kV

Transistor Element Material :

SILICON

Turn On Time :

36 ns

Packaging :

Tube

JESD-609 Code :

e1

Td (on/off) @ 25°C :

16ns/95ns

Gate-Emitter Thr Voltage-Max :

6V

Input Type :

Standard

Mounting Type :

Through Hole

Max Collector Current :

96A

Collector Emitter Breakdown Voltage :

1.2kV

Factory Lead Time :

33 Weeks

Vce(on) (Max) @ Vge, Ic :

3.9V @ 15V, 35A

RoHS Status :

RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Polarity/Channel Type :

N-Channel

Test Condition :

600V, 35A, 4.3 Ω, 15V

Transistor Application :

POWER CONTROL

Gate Charge :

150nC

Lead Free :

Lead Free

Switching Energy :

750μJ (on), 680μJ (off)

Current - Collector Pulsed (Icm) :

140A

Series :

POWER MOS 7®

Pin Count :

3

ECCN Code :

EAR99

Radiation Hardening :

No

Voltage - Collector Emitter Breakdown (Max) :

1200V