APT35GA90B
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- Mfr.Part #
- APT35GA90B
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 900V 63A 290W TO-247
- Stock
- 36,349
- In Stock ：
- 36,349
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Additional Feature :
- LOW CONDUCTION LOSS
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Gate Charge :
- 84nC
- Test Condition :
- 600V, 18A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic :
- 3.1V @ 15V, 18A
- Input Type :
- Standard
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Case Connection :
- COLLECTOR
- Turn Off Time-Nom (toff) :
- 298 ns
- Td (on/off) @ 25°C :
- 12ns/104ns
- Max Power Dissipation :
- 290W
- Factory Lead Time :
- 32 Weeks
- Packaging :
- Tube
- Max Collector Current :
- 63A
- Turn On Time :
- 25 ns
- Collector Emitter Breakdown Voltage :
- 900V
- Pbfree Code :
- yes
- Terminal Finish :
- TIN SILVER COPPER
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Power - Max :
- 290W
- Mount :
- Through Hole
- IGBT Type :
- PT
- Number of Elements :
- 1
- Switching Energy :
- 642μJ (on), 382μJ (off)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Pulsed (Icm) :
- 105A
- Transistor Application :
- POWER CONTROL
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 900V
- Package / Case :
- TO-247-3
- Series :
- POWER MOS 8™
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- APT35GA90B
APT35GA90B datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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