APT33GF120B2RDQ2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Voltage - Rated DC :

1.2kV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Voltage - Collector Emitter Breakdown (Max) :

1200V

Lead Free :

Lead Free

Current - Collector Pulsed (Icm) :

75A

JESD-609 Code :

e1

Factory Lead Time :

29 Weeks

Input Type :

Standard

Pin Count :

3

Pbfree Code :

yes

IGBT Type :

NPT

Turn Off Time-Nom (toff) :

355 ns

Max Power Dissipation :

357W

Operating Temperature :

-55°C~150°C TJ

Case Connection :

COLLECTOR

Mount :

Through Hole

Current Rating :

64A

Turn On Time :

31 ns

Element Configuration :

Single

Transistor Application :

POWER CONTROL

Package / Case :

TO-247-3 Variant

Max Collector Current :

64A

Vce(on) (Max) @ Vge, Ic :

3V @ 15V, 25A

Collector Emitter Voltage (VCEO) :

1.2kV

Polarity/Channel Type :

N-Channel

RoHS Status :

RoHS Compliant

Terminal Finish :

TIN SILVER COPPER

Number of Terminations :

3

Gate-Emitter Thr Voltage-Max :

6.5V

Mounting Type :

Through Hole

Number of Pins :

3

Test Condition :

800V, 25A, 4.3 Ω, 15V

Switching Energy :

1.315mJ (on), 1.515mJ (off)

Collector Emitter Breakdown Voltage :

1.2kV

Published :

1999

Gate Charge :

170nC

Td (on/off) @ 25°C :

14ns/185ns

Radiation Hardening :

No

Packaging :

Tube