APT30M19JVFR
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- Mfr.Part #
- APT30M19JVFR
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 300V 130A ISOTOP
- Stock
- 22,182
- In Stock ：
- 22,182
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 4
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Terminal Position :
- UPPER
- Turn On Delay Time :
- 22 ns
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Vgs (Max) :
- ±30V
- Pbfree Code :
- yes
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Turn-Off Delay Time :
- 70 ns
- Voltage - Rated DC :
- 300V
- Package / Case :
- SOT-227-4, miniBLOC
- Rds On (Max) @ Id, Vgs :
- 19m Ω @ 500mA, 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 975nC @ 10V
- Additional Feature :
- FREDFET
- Case Connection :
- Isolated
- Rise Time :
- 33ns
- Series :
- POWER MOS V®
- Mounting Type :
- Chassis Mount
- Continuous Drain Current (ID) :
- 130A
- Power Dissipation :
- 700W
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Current Rating :
- 130A
- Gate to Source Voltage (Vgs) :
- 30V
- Input Capacitance (Ciss) (Max) @ Vds :
- 21600pF @ 25V
- Power Dissipation-Max :
- 700W Tc
- Factory Lead Time :
- 22 Weeks
- Pulsed Drain Current-Max (IDM) :
- 520A
- Packaging :
- Tube
- Current - Continuous Drain (Id) @ 25°C :
- 130A Tc
- Mount :
- Chassis Mount, Screw
- Terminal Form :
- UNSPECIFIED
- Avalanche Energy Rating (Eas) :
- 3600 mJ
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Pins :
- 4
- Published :
- 1997
- Fall Time (Typ) :
- 10 ns
- Vgs(th) (Max) @ Id :
- 4V @ 5mA
- Datasheets
- APT30M19JVFR
N-Channel Tube 19m Ω @ 500mA, 10V ±30V 21600pF @ 25V 975nC @ 10V SOT-227-4, miniBLOC
APT30M19JVFR Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3600 mJ.A device's maximum input capacitance is 21600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 130A for this device. Drain current refers to the capacity of the device to conduct continuous current.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Its maximum pulsed drain current is 520A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 22 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
APT30M19JVFR Features
the avalanche energy rating (Eas) is 3600 mJ
a continuous drain current (ID) of 130A
the turn-off delay time is 70 ns
based on its rated peak drain current 520A.
APT30M19JVFR Applications
There are a lot of Microsemi Corporation
APT30M19JVFR applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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