APT30GP60BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

600V

Collector Emitter Voltage (VCEO) :

600V

Published :

1999

Turn On Time :

31 ns

Switching Energy :

260μJ (on), 250μJ (off)

Mount :

Through Hole

Factory Lead Time :

30 Weeks

Case Connection :

COLLECTOR

Transistor Application :

POWER CONTROL

Voltage - Rated DC :

600V

Pin Count :

3

Mounting Type :

Through Hole

Number of Terminations :

3

JEDEC-95 Code :

TO-247AD

Transistor Element Material :

SILICON

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

13ns/55ns

Element Configuration :

Single

Radiation Hardening :

No

Power - Max :

463W

Test Condition :

400V, 30A, 5 Ω, 15V

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e1

RoHS Status :

RoHS Compliant

Package / Case :

TO-247-3

Operating Temperature :

-55°C~150°C TJ

Turn Off Time-Nom (toff) :

164 ns

IGBT Type :

PT

Max Power Dissipation :

463W

Series :

POWER MOS 7®

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 30A

Max Collector Current :

100A

Input Type :

Standard

Packaging :

Tube

Gate Charge :

90nC

Additional Feature :

LOW CONDUCTION LOSS

Polarity/Channel Type :

N-Channel

Lead Free :

Lead Free

Current Rating :

30A

Terminal Finish :

TIN SILVER COPPER