APT30GP60B2DLG

Manufacturer :

Microsemi

Product Category :

Transistors - IGBTs - Single

Published :

2001

Polarity/Channel Type :

N-Channel

Number of Pins :

3

Mounting Type :

Through Hole

Gate Charge :

90nC

Turn Off Time-Nom (toff) :

164 ns

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Transistor Element Material :

SILICON

Gate-Emitter Voltage-Max :

20V

IGBT Type :

PT

Number of Elements :

1

Collector Emitter Breakdown Voltage :

600V

Radiation Hardening :

No

Pbfree Code :

yes

Collector Emitter Voltage (VCEO) :

600V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 30A

Max Collector Current :

100A

Gate-Emitter Thr Voltage-Max :

6V

JESD-609 Code :

e1

Element Configuration :

Single

Test Condition :

400V, 30A, 5 Ω, 15V

Case Connection :

COLLECTOR

Package / Case :

TO-247-3

Factory Lead Time :

22 Weeks

Additional Feature :

LOW CONDUCTION LOSS

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

Motor Control

Td (on/off) @ 25°C :

13ns/55ns

Current - Collector Pulsed (Icm) :

120A

Mount :

Through Hole

Turn On Time :

31 ns

JEDEC-95 Code :

TO-247AD

Number of Terminations :

3

Power - Max :

463W

Pin Count :

3

RoHS Status :

RoHS Compliant

Input Type :

Standard

Switching Energy :

260μJ (on), 250μJ (off)

Max Power Dissipation :

463W

Lifecycle Status :

OBSOLETE (Last Updated: 3 weeks ago)