APT30GN60BDQ2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate Charge :

165nC

Max Collector Current :

63A

Published :

1999

Gate-Emitter Voltage-Max :

30V

Voltage - Rated DC :

600V

Turn On Time :

26 ns

Transistor Application :

POWER CONTROL

Current Rating :

63A

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Nom (toff) :

255 ns

Number of Elements :

1

Pin Count :

3

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~175°C TJ

Radiation Hardening :

No

Package / Case :

TO-247-3

JESD-30 Code :

R-PSFM-T3

Factory Lead Time :

25 Weeks

JESD-609 Code :

e1

Collector Emitter Voltage (VCEO) :

600V

Switching Energy :

525μJ (on), 700μJ (off)

Td (on/off) @ 25°C :

12ns/155ns

IGBT Type :

Trench Field Stop

Max Power Dissipation :

203W

Number of Terminations :

3

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Pbfree Code :

yes

Gate-Emitter Thr Voltage-Max :

6.5V

Collector Emitter Breakdown Voltage :

600V

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 30A

Input Type :

Standard

Test Condition :

400V, 30A, 4.3 Ω, 15V

Polarity/Channel Type :

N-Channel

Case Connection :

COLLECTOR

Packaging :

Tube

Mounting Type :

Through Hole

Lead Free :

Lead Free

Mount :

Through Hole

Current - Collector Pulsed (Icm) :

90A