APT30GN60BDQ2G

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Max Collector Current :

63A

Gate-Emitter Thr Voltage-Max :

6.5V

Td (on/off) @ 25°C :

12ns/155ns

Element Configuration :

Single

Current Rating :

63A

Packaging :

Tube

ECCN Code :

EAR99

Case Connection :

COLLECTOR

RoHS Status :

RoHS Compliant

Factory Lead Time :

25 Weeks

Collector Emitter Breakdown Voltage :

600V

JESD-609 Code :

e1

Transistor Application :

POWER CONTROL

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Turn Off Time-Nom (toff) :

255 ns

Mount :

Through Hole

Published :

1999

IGBT Type :

Trench Field Stop

Switching Energy :

525μJ (on), 700μJ (off)

Max Power Dissipation :

203W

Package / Case :

TO-247-3

Input Type :

Standard

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Pin Count :

3

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 30A

Collector Emitter Voltage (VCEO) :

600V

Gate Charge :

165nC

Pbfree Code :

yes

Mounting Type :

Through Hole

Number of Terminations :

3

Number of Elements :

1

Gate-Emitter Voltage-Max :

30V

JESD-30 Code :

R-PSFM-T3

Voltage - Rated DC :

600V

Polarity/Channel Type :

N-Channel

Test Condition :

400V, 30A, 4.3 Ω, 15V

Current - Collector Pulsed (Icm) :

90A

Transistor Element Material :

SILICON

Turn On Time :

26 ns

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free