APT27ZTR-G1
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- Mfr.Part #
- APT27ZTR-G1
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 450V 0.8A TO92
- Stock
- 32,013
- In Stock ：
- 32,013
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 450V
- Max Breakdown Voltage :
- 450V
- Power - Max :
- 800mW
- Max Operating Temperature :
- 150°C
- Transistor Type :
- NPN
- Min Operating Temperature :
- -55°C
- Collector Emitter Breakdown Voltage :
- 450V
- Packaging :
- Tape and Box (TB)
- Supplier Device Package :
- TO-92
- Collector Emitter Saturation Voltage :
- 500mV
- Operating Temperature :
- -55°C~150°C TJ
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 40mA, 200mA
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 500mV
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Current - Collector Cutoff (Max) :
- 10μA
- Polarity :
- NPN
- Continuous Collector Current :
- 800mA
- Current - Collector (Ic) (Max) :
- 800mA
- Published :
- 2014
- Max Power Dissipation :
- 800mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Weight :
- 453.59237mg
- Mount :
- Through Hole
- Element Configuration :
- Single
- Max Collector Current :
- 800mA
- Emitter Base Voltage (VEBO) :
- 9V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 15 @ 100mA 10V
- Datasheets
- APT27ZTR-G1
NPN -55°C~150°C TJ 10μA TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
APT27ZTR-G1 Overview
In this device, the DC current gain is 15 @ 100mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 40mA, 200mA.A 800mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 9V, an efficient operation can be achieved.Input voltage breakdown is available at 450V volts.Product comes in the supplier's device package TO-92.There is a 450V maximal voltage in the device due to collector-emitter breakdown.Single BJT transistor is possible for the collector current to fall as low as 800mA volts at Single BJT transistors maximum.
APT27ZTR-G1 Features
the DC current gain for this device is 15 @ 100mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 40mA, 200mA
the emitter base voltage is kept at 9V
the supplier device package of TO-92
APT27ZTR-G1 Applications
There are a lot of Diodes Incorporated
APT27ZTR-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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