APT25GP120BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Td (on/off) @ 25°C :

12ns/70ns

Mount :

Through Hole

Published :

1999

Additional Feature :

ULTRA FAST, LOW CONDUCTION LOSS

Package / Case :

TO-247-3

Turn On Time :

26 ns

Element Configuration :

Single

Polarity/Channel Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

1.2kV

Collector Emitter Breakdown Voltage :

1.2kV

Pbfree Code :

yes

Current - Collector Pulsed (Icm) :

90A

Test Condition :

600V, 25A, 5 Ω, 15V

Factory Lead Time :

22 Weeks

Gate Charge :

110nC

Switching Energy :

500μJ (on), 438μJ (off)

Number of Terminations :

3

Terminal Finish :

TIN SILVER COPPER

Mounting Type :

Through Hole

Turn Off Time-Nom (toff) :

197 ns

Max Collector Current :

69A

Number of Elements :

1

Radiation Hardening :

No

Lead Free :

Lead Free

RoHS Status :

RoHS Compliant

Operating Temperature :

-55°C~150°C TJ

Series :

POWER MOS 7®

Transistor Element Material :

SILICON

Collector Emitter Voltage (VCEO) :

1.2kV

Packaging :

Tube

Input Type :

Standard

JESD-609 Code :

e1

Pin Count :

3

Vce(on) (Max) @ Vge, Ic :

3.9V @ 15V, 25A

Transistor Application :

POWER CONTROL

Max Power Dissipation :

417W

JESD-30 Code :

R-PSFM-T3

Case Connection :

COLLECTOR

Voltage - Collector Emitter Breakdown (Max) :

1200V

IGBT Type :

PT

JEDEC-95 Code :

TO-247AD

Current Rating :

69A