APT25GN120SG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Published :

1999

Collector Emitter Saturation Voltage :

1.7V

Operating Temperature :

-55°C~150°C TJ

Gate-Emitter Thr Voltage-Max :

6.5V

Case Connection :

COLLECTOR

Pbfree Code :

yes

Gate Charge :

155nC

Max Collector Current :

67A

Number of Elements :

1

Current - Collector Pulsed (Icm) :

75A

Peak Reflow Temperature (Cel) :

245

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 25A

Terminal Form :

Gull wing

IGBT Type :

Trench Field Stop

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

TO-268-3, D3Pak (2 Leads + Tab), TO-268AA

Voltage - Collector Emitter Breakdown (Max) :

1200V

Length :

16.05mm

Pin Count :

3

Additional Feature :

High Reliability

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Turn On Delay Time :

22 ns

Height :

5.08mm

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

1.2kV

Turn Off Time-Nom (toff) :

560 ns

Element Configuration :

Single

Lead Free :

Lead Free

ECCN Code :

EAR99

Turn-Off Delay Time :

280 ns

RoHS Status :

RoHS Compliant

Continuous Collector Current :

67A

Width :

13.99mm

Test Condition :

800V, 25A, 1 Ω, 15V

Input Type :

Standard

Factory Lead Time :

25 Weeks

Collector Emitter Breakdown Voltage :

1.2kV

Td (on/off) @ 25°C :

22ns/280ns

Mounting Type :

Surface Mount

Max Power Dissipation :

272W

JESD-30 Code :

R-PSSO-G2

Number of Terminations :

2

Turn On Time :

39 ns

Number of Pins :

3

Radiation Hardening :

No

Transistor Element Material :

SILICON

Packaging :

Tube

Transistor Application :

POWER CONTROL