APT25GN120BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Number of Elements :

1

Current - Collector Pulsed (Icm) :

75A

Switching Energy :

2.15μJ (off)

IGBT Type :

Trench Field Stop

Mount :

Through Hole

Lead Free :

Lead Free

Pin Count :

3

Gate-Emitter Thr Voltage-Max :

6.5V

Input Type :

Standard

Collector Emitter Voltage (VCEO) :

1.2kV

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Polarity/Channel Type :

N-Channel

Packaging :

Tube

Turn-Off Delay Time :

280 ns

ECCN Code :

EAR99

Max Collector Current :

67A

Test Condition :

800V, 25A, 1 Ω, 15V

Gate Charge :

155nC

JESD-30 Code :

R-PSFM-T3

Max Power Dissipation :

272W

Transistor Application :

POWER CONTROL

Case Connection :

COLLECTOR

JESD-609 Code :

e1

Voltage - Rated DC :

1.2kV

Mounting Type :

Through Hole

Radiation Hardening :

No

Voltage - Collector Emitter Breakdown (Max) :

1200V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

24 Weeks

Current Rating :

67A

Pbfree Code :

yes

Published :

1999

Transistor Element Material :

SILICON

Package / Case :

TO-247-3

JEDEC-95 Code :

TO-247AD

Gate-Emitter Voltage-Max :

30V

RoHS Status :

RoHS Compliant

Collector Emitter Breakdown Voltage :

1.2kV

Td (on/off) @ 25°C :

22ns/280ns

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 25A

Number of Terminations :

3

Turn Off Time-Nom (toff) :

560 ns

Additional Feature :

High Reliability

Turn On Time :

39 ns

Element Configuration :

Single

Turn On Delay Time :

22 ns