APT25GN120BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

280 ns

Voltage - Collector Emitter Breakdown (Max) :

1200V

Package / Case :

TO-247-3

Collector Emitter Breakdown Voltage :

1.2kV

Pbfree Code :

yes

Radiation Hardening :

No

Pin Count :

3

Collector Emitter Voltage (VCEO) :

1.2kV

Additional Feature :

High Reliability

Gate-Emitter Thr Voltage-Max :

6.5V

Voltage - Rated DC :

1.2kV

Test Condition :

800V, 25A, 1 Ω, 15V

Max Collector Current :

67A

Lead Free :

Lead Free

ECCN Code :

EAR99

Published :

1999

Factory Lead Time :

24 Weeks

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 25A

Mount :

Through Hole

Switching Energy :

2.15μJ (off)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

JESD-30 Code :

R-PSFM-T3

Turn On Delay Time :

22 ns

Case Connection :

COLLECTOR

Number of Elements :

1

Element Configuration :

Single

JESD-609 Code :

e1

Number of Terminations :

3

Current Rating :

67A

RoHS Status :

RoHS Compliant

Current - Collector Pulsed (Icm) :

75A

Transistor Application :

POWER CONTROL

Turn Off Time-Nom (toff) :

560 ns

Mounting Type :

Through Hole

JEDEC-95 Code :

TO-247AD

Max Power Dissipation :

272W

Td (on/off) @ 25°C :

22ns/280ns

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Type :

Standard

IGBT Type :

Trench Field Stop

Gate Charge :

155nC

Gate-Emitter Voltage-Max :

30V

Turn On Time :

39 ns