APT20GN60BG

Manufacturer :

Microchip Technology

Product Category :

Transistors - IGBTs - Single

Switching Energy :

230μJ (on), 580μJ (off)

Element Configuration :

Single

Turn Off Time-Nom (toff) :

290 ns

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Gate-Emitter Voltage-Max :

30V

Mounting Type :

Through Hole

Collector Emitter Voltage (VCEO) :

600V

Current - Collector Pulsed (Icm) :

60A

Packaging :

Tube

Transistor Element Material :

SILICON

Input Type :

Standard

Test Condition :

400V, 20A, 4.3 Ω, 15V

Voltage - Rated DC :

600V

JESD-609 Code :

e1

JEDEC-95 Code :

TO-247AD

Factory Lead Time :

22 Weeks

Collector Emitter Breakdown Voltage :

600V

Pin Count :

3

Transistor Application :

POWER CONTROL

Number of Elements :

1

IGBT Type :

Trench Field Stop

Vce(on) (Max) @ Vge, Ic :

1.9V @ 15V, 20A

Turn On Time :

19 ns

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

40A

Max Power Dissipation :

136W

Case Connection :

COLLECTOR

Gate Charge :

120nC

ECCN Code :

EAR99

Radiation Hardening :

No

JESD-30 Code :

R-PSFM-T3

Polarity/Channel Type :

N-Channel

Gate-Emitter Thr Voltage-Max :

6.5V

RoHS Status :

RoHS Compliant

Package / Case :

TO-247-3

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Lead Free

Max Collector Current :

40A

Published :

1999

Td (on/off) @ 25°C :

9ns/140ns

Mount :

Through Hole

Number of Terminations :

3