APT20GN60BDQ1G
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- Mfr.Part #
- APT20GN60BDQ1G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGBT 600V 40A 136W TO247
- Stock
- 10,713
- In Stock ：
- 10,713
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - IGBTs - Single
- Pin Count :
- 3
- Switching Energy :
- 230μJ (on), 580μJ (off)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 20A
- Terminal Finish :
- TIN SILVER COPPER
- Package / Case :
- TO-247-3
- Mount :
- Through Hole
- Max Power Dissipation :
- 136W
- Gate Charge :
- 120nC
- Published :
- 1999
- Mounting Type :
- Through Hole
- Case Connection :
- COLLECTOR
- Polarity/Channel Type :
- N-Channel
- Input Type :
- Standard
- Collector Emitter Breakdown Voltage :
- 600V
- Lead Free :
- Lead Free
- Turn On Time :
- 19 ns
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 600V
- Current - Collector Pulsed (Icm) :
- 60A
- Current Rating :
- 40A
- Radiation Hardening :
- No
- Collector Emitter Voltage (VCEO) :
- 600V
- Turn Off Time-Nom (toff) :
- 290 ns
- Transistor Application :
- POWER CONTROL
- Td (on/off) @ 25°C :
- 9ns/140ns
- IGBT Type :
- Trench Field Stop
- Packaging :
- Tube
- Max Collector Current :
- 40A
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~175°C TJ
- Element Configuration :
- Single
- Gate-Emitter Voltage-Max :
- 30V
- Factory Lead Time :
- 25 Weeks
- JESD-609 Code :
- e1
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Test Condition :
- 400V, 20A, 4.3 Ω, 15V
- Number of Terminations :
- 3
- RoHS Status :
- RoHS Compliant
- JESD-30 Code :
- R-PSFM-T3
- Datasheets
- APT20GN60BDQ1G
APT20GN60BDQ1G datasheet pdf and Transistors - IGBTs - Single product details from Microsemi Corporation stock available at
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