APT13003NZTR-G1
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- Mfr.Part #
- APT13003NZTR-G1
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 900V 1.5A TO92
- Stock
- 40,324
- In Stock ：
- 40,324
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Configuration :
- Single
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Terminal Position :
- BOTTOM
- Power - Max :
- 1W
- Max Collector Current :
- 1.5A
- Terminal Form :
- Wire
- Transistor Type :
- NPN
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Frequency - Transition :
- 4MHz
- Factory Lead Time :
- 15 Weeks
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 5 @ 1A 2V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Breakdown Voltage :
- 900V
- Packaging :
- Tape and Box (TB)
- Max Power Dissipation :
- 1W
- Collector Emitter Voltage (VCEO) :
- 400mV
- Reach Compliance Code :
- not_compliant
- Turn On Time-Max (ton) :
- 4500ns
- Transition Frequency :
- 4MHz
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Application :
- SWITCHING
- Published :
- 2015
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 250mA, 1A
- JESD-30 Code :
- O-PBCY-W3
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 900V
- Datasheets
- APT13003NZTR-G1
APT13003NZTR-G1 Documents
NPN -55°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
APT13003NZTR-G1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 5 @ 1A 2V DC current gain.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.There is a transition frequency of 4MHz in the part.Single BJT transistor can be broken down at a voltage of 900V volts.When collector current reaches its maximum, it can reach 1.5A volts.
APT13003NZTR-G1 Features
the DC current gain for this device is 5 @ 1A 2V
the vce saturation(Max) is 400mV @ 250mA, 1A
a transition frequency of 4MHz
APT13003NZTR-G1 Applications
There are a lot of Diodes Incorporated
APT13003NZTR-G1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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