APT13003EZTR-G1

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Single

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Breakdown Voltage :

465V

DC Current Gain (hFE) (Min) @ Ic, Vce :

13 @ 500mA 2V

Max Collector Current :

1.5A

Emitter Base Voltage (VEBO) :

9V

Height :

4.7mm

Min Operating Temperature :

-65°C

Max Operating Temperature :

150°C

Frequency - Transition :

4MHz

Supplier Device Package :

TO-92

Length :

4.7mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2017

Number of Pins :

3

Packaging :

Tape and Box (TB)

Collector Emitter Saturation Voltage :

400mV

Contact Plating :

Tin

Current - Collector (Ic) (Max) :

1.5A

RoHS Status :

ROHS3 Compliant

Mounting Type :

Through Hole

Element Configuration :

Single

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Collector Emitter Voltage (VCEO) :

400mV

Width :

3.7mm

Max Power Dissipation :

1.1W

Vce Saturation (Max) @ Ib, Ic :

400mV @ 250mA, 1A

Transistor Type :

NPN

Power - Max :

1.1W

Voltage - Collector Emitter Breakdown (Max) :

465V

Collector Base Voltage (VCBO) :

10V

Mount :

Through Hole

Factory Lead Time :

15 Weeks