APT13003DU-G1

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Mfr.Part #
APT13003DU-G1
Manufacturer
Diodes Incorporated
Package / Case
TO-225AA, TO-126-3
Datasheet
Download
Description
TRANS NPN 450V 1.5A TO126
Stock
19,873
In Stock :
19,873

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Published :
2016
Collector Emitter Saturation Voltage :
300mV
Turn Off Time-Max (toff) :
3350ns
Number of Elements :
1
Terminal Finish :
MATTE TIN
Continuous Collector Current :
1.5A
JESD-30 Code :
R-PSFM-T3
Max Power Dissipation :
20W
Emitter Base Voltage (VEBO) :
9V
Mount :
Through Hole
Element Configuration :
Single
Transistor Type :
NPN
Operating Temperature :
-65°C~150°C TJ
Vce Saturation (Max) @ Ib, Ic :
400mV @ 250mA, 1A
Max Collector Current :
1.5A
Transistor Application :
SWITCHING
Gain Bandwidth Product :
4MHz
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Number of Terminations :
3
Transition Frequency :
4MHz
Polarity/Channel Type :
NPN
Fall Time-Max (tf) :
350ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-225AA, TO-126-3
JESD-609 Code :
e3
DC Current Gain (hFE) (Min) @ Ic, Vce :
5 @ 1A 2V
Factory Lead Time :
15 Weeks
Collector Emitter Voltage (VCEO) :
400mV
VCEsat-Max :
0.4 V
Mounting Type :
Through Hole
Turn On Time-Max (ton) :
700ns
Collector Emitter Breakdown Voltage :
450V
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Datasheets
APT13003DU-G1
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated APT13003DU-G1 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Package / Case:TO-225AA, TO-126-3, Mounting Type:Through Hole, APT13003DU-G1 pinout, APT13003DU-G1 datasheet PDF, APT13003DU-G1 amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated APT13003DU-G1 ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated APT13003DU-G1


NPN -65°C~150°C TJ 1 Elements 3 Terminations SILICON NPN TO-225AA, TO-126-3 Tube Through Hole

APT13003DU-G1 Overview


This device has a DC current gain of 5 @ 1A 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 400mV @ 250mA, 1A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 1.5A to achieve high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at 9V.As you can see, the part has a transition frequency of 4MHz.A maximum collector current of 1.5A volts is possible.

APT13003DU-G1 Features


the DC current gain for this device is 5 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
a transition frequency of 4MHz


APT13003DU-G1 Applications


There are a lot of Diodes Incorporated
APT13003DU-G1 applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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