APL602LG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e1

Turn-Off Delay Time :

56 ns

Rise Time :

27ns

Power Dissipation :

730W

Drive Voltage (Max Rds On,Min Rds On) :

12V

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

3000 mJ

Number of Terminations :

3

Fall Time (Typ) :

16 ns

Current Rating :

49A

Packaging :

Tube

Pin Count :

3

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Lead Free

Published :

1997

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

125m Ω @ 24.5A, 12V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

49A

Factory Lead Time :

23 Weeks

Vgs(th) (Max) @ Id :

4V @ 2.5mA

Power Dissipation-Max :

730W Tc

ECCN Code :

EAR99

Number of Elements :

1

Mount :

Through Hole

Package / Case :

TO-264-3, TO-264AA

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Voltage - Rated DC :

600V

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

RoHS Status :

RoHS Compliant

JESD-30 Code :

R-PSFM-T3

Case Connection :

DRAIN

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Radiation Hardening :

No

Turn On Delay Time :

13 ns