APL602LG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e1

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn On Delay Time :

13 ns

Factory Lead Time :

23 Weeks

Transistor Element Material :

SILICON

FET Type :

N-Channel

Rise Time :

27ns

Lead Free :

Lead Free

Power Dissipation-Max :

730W Tc

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 2.5mA

Mounting Type :

Through Hole

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Drive Voltage (Max Rds On,Min Rds On) :

12V

Rds On (Max) @ Id, Vgs :

125m Ω @ 24.5A, 12V

Avalanche Energy Rating (Eas) :

3000 mJ

ECCN Code :

EAR99

Pin Count :

3

Current - Continuous Drain (Id) @ 25°C :

49A Tc

Terminal Position :

Single

Number of Elements :

1

Turn-Off Delay Time :

56 ns

Radiation Hardening :

No

Vgs (Max) :

±30V

Operating Temperature :

-55°C~150°C TJ

Gate to Source Voltage (Vgs) :

30V

Current Rating :

49A

Fall Time (Typ) :

16 ns

Packaging :

Tube

Input Capacitance (Ciss) (Max) @ Vds :

9000pF @ 25V

Voltage - Rated DC :

600V

Published :

1997

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

RoHS Compliant

Continuous Drain Current (ID) :

49A

Package / Case :

TO-264-3, TO-264AA

Number of Terminations :

3

Mount :

Through Hole

Transistor Application :

AMPLIFIER

JESD-30 Code :

R-PSFM-T3

Case Connection :

DRAIN

Power Dissipation :

730W