APL602J
- Mfr.Part #
- APL602J
- Manufacturer
- Microchip Technology
- Package / Case
- SOT-227-4, miniBLOC
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 43A ISOTOP
- Stock
- 15,230
- In Stock :
- 15,230
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Additional Feature :
- UL RECOGNIZED
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Mounting Type :
- Chassis Mount
- Terminal Form :
- UNSPECIFIED
- Continuous Drain Current (ID) :
- 43A
- Width :
- 25.4mm
- Factory Lead Time :
- 22 Weeks
- Transistor Application :
- AMPLIFIER
- Operating Mode :
- ENHANCEMENT MODE
- Number of Pins :
- 4
- Number of Terminations :
- 4
- RoHS Status :
- RoHS Compliant
- Power Dissipation-Max :
- 565W Tc
- Power Dissipation :
- 565W
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 12V
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Rds On (Max) @ Id, Vgs :
- 125m Ω @ 21.5A, 12V
- Turn-Off Delay Time :
- 58 ns
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Mount :
- Chassis Mount, Screw
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 30.000004g
- Number of Elements :
- 1
- Length :
- 38.2mm
- Published :
- 1997
- Pin Count :
- 4
- Turn On Delay Time :
- 13 ns
- Current - Continuous Drain (Id) @ 25°C :
- 43A Tc
- Current Rating :
- 43A
- FET Type :
- N-Channel
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Fall Time (Typ) :
- 14 ns
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 600V
- Voltage - Rated DC :
- 600V
- Height :
- 9.6mm
- Transistor Element Material :
- SILICON
- Terminal Finish :
- TIN SILVER COPPER
- Case Connection :
- Isolated
- Number of Channels :
- 1
- Terminal Position :
- UPPER
- Package / Case :
- SOT-227-4, miniBLOC
- Gate to Source Voltage (Vgs) :
- 30V
- Rise Time :
- 24ns
- Datasheets
- APL602J

N-Channel Tube 125m Ω @ 21.5A, 12V ±30V 9000pF @ 25V SOT-227-4, miniBLOC
APL602J Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 58 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (12V).
APL602J Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 43A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 58 ns
APL602J Applications
There are a lot of Microsemi Corporation
APL602J applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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