APL502LG
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- Mfr.Part #
- APL502LG
- Manufacturer
- Microchip Technology
- Package / Case
- TO-264-3, TO-264AA
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 58A TO264
- Stock
- 1,866
- In Stock ：
- 1,866
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Voltage - Rated DC :
- 500V
- Weight :
- 10.6g
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- Current Rating :
- 58A
- Fall Time (Typ) :
- 16 ns
- Published :
- 1997
- Turn-Off Delay Time :
- 56 ns
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Terminal Position :
- Single
- Continuous Drain Current (ID) :
- 58A
- Gate to Source Voltage (Vgs) :
- 30V
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Length :
- 26.49mm
- Operating Mode :
- ENHANCEMENT MODE
- Height :
- 5.21mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Drive Voltage (Max Rds On,Min Rds On) :
- 15V
- Mount :
- Through Hole
- Pulsed Drain Current-Max (IDM) :
- 232A
- Packaging :
- Tube
- Power Dissipation-Max :
- 730W Tc
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 29A, 12V
- Mounting Type :
- Through Hole
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Number of Terminations :
- 3
- Factory Lead Time :
- 24 Weeks
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Turn On Delay Time :
- 13 ns
- Case Connection :
- DRAIN
- Vgs (Max) :
- ±30V
- Package / Case :
- TO-264-3, TO-264AA
- JESD-30 Code :
- R-PSFM-T3
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Resistance :
- 90mOhm
- Width :
- 20.5mm
- Power Dissipation :
- 730W
- Pin Count :
- 3
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- N-Channel
- Drain to Source Breakdown Voltage :
- 500V
- Rise Time :
- 27ns
- Datasheets
- APL502LG
N-Channel Tube 90m Ω @ 29A, 12V ±30V 9000pF @ 25V TO-264-3, TO-264AA
APL502LG Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 56 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 232A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (15V).
APL502LG Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 58A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 56 ns
based on its rated peak drain current 232A.
APL502LG Applications
There are a lot of Microsemi Corporation
APL502LG applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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