APL502B2G
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- Mfr.Part #
- APL502B2G
- Manufacturer
- Microchip Technology
- Package / Case
- TO-247-3 Variant
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 58A T-MAX
- Stock
- 24,666
- In Stock ：
- 24,666
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 30V
- Fall Time (Typ) :
- 16 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 9000pF @ 25V
- Radiation Hardening :
- No
- Terminal Position :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 15V
- Contact Plating :
- Gold, Tin
- Width :
- 16.26mm
- Factory Lead Time :
- 24 Weeks
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 56 ns
- Height :
- 5.31mm
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 29A, 12V
- RoHS Status :
- RoHS Compliant
- Continuous Drain Current (ID) :
- 58A
- Turn On Delay Time :
- 13 ns
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Rise Time :
- 27ns
- Vgs(th) (Max) @ Id :
- 4V @ 2.5mA
- ECCN Code :
- EAR99
- Mount :
- Through Hole
- Drain to Source Breakdown Voltage :
- 500V
- Package / Case :
- TO-247-3 Variant
- Number of Pins :
- 3
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Number of Channels :
- 1
- Power Dissipation-Max :
- 730W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 58A Tc
- Length :
- 21.46mm
- Published :
- 1997
- Power Dissipation :
- 730W
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Current Rating :
- 58A
- Packaging :
- Tube
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.09Ohm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vgs (Max) :
- ±30V
- Voltage - Rated DC :
- 500V
- Datasheets
- APL502B2G
N-Channel Tube 90m Ω @ 29A, 12V ±30V 9000pF @ 25V TO-247-3 Variant
APL502B2G Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 56 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (15V).
APL502B2G Features
a continuous drain current (ID) of 58A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 56 ns
APL502B2G Applications
There are a lot of Microsemi Corporation
APL502B2G applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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