APL502B2G

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Mfr.Part #
APL502B2G
Manufacturer
Microchip Technology
Package / Case
TO-247-3 Variant
Datasheet
Download
Description
MOSFET N-CH 500V 58A T-MAX
Stock
24,666
In Stock :
24,666

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Manufacturer :
Microchip Technology
Product Category :
Transistors - FETs, MOSFETs - Single
Fall Time (Typ) :
16 ns
Turn-Off Delay Time :
56 ns
ECCN Code :
EAR99
Power Dissipation-Max :
730W Tc
Operating Mode :
ENHANCEMENT MODE
Gate to Source Voltage (Vgs) :
30V
Rise Time :
27ns
Input Capacitance (Ciss) (Max) @ Vds :
9000pF @ 25V
Packaging :
Tube
Mounting Type :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
58A Tc
Factory Lead Time :
24 Weeks
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Mount :
Through Hole
Voltage - Rated DC :
500V
Turn On Delay Time :
13 ns
Current Rating :
58A
Number of Channels :
1
Published :
1997
RoHS Status :
RoHS Compliant
Contact Plating :
Gold, Tin
Power Dissipation :
730W
Operating Temperature :
-55°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
58A
Radiation Hardening :
No
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
15V
Vgs (Max) :
±30V
Case Connection :
DRAIN
FET Type :
N-Channel
Terminal Position :
Single
Number of Elements :
1
Length :
21.46mm
Number of Terminations :
3
Rds On (Max) @ Id, Vgs :
90m Ω @ 29A, 12V
Height :
5.31mm
Number of Pins :
3
Package / Case :
TO-247-3 Variant
Vgs(th) (Max) @ Id :
4V @ 2.5mA
Configuration :
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max :
0.09Ohm
JESD-609 Code :
e1
Drain to Source Breakdown Voltage :
500V
Transistor Element Material :
SILICON
Width :
16.26mm
Datasheets
APL502B2G
Introducing Transistors - FETs, MOSFETs - Single Microchip Technology APL502B2G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Channels:1, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Number of Pins:3, Package / Case:TO-247-3 Variant, APL502B2G pinout, APL502B2G datasheet PDF, APL502B2G amp .Beyond Transistors - FETs, MOSFETs - Single Microchip Technology APL502B2G ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Microchip Technology APL502B2G


N-Channel Tube 90m Ω @ 29A, 12V ±30V 9000pF @ 25V TO-247-3 Variant

APL502B2G Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 9000pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 500V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 500V.As a result of its turn-off delay time, which is 56 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.In addition to reducing power consumption, this device uses drive voltage (15V).

APL502B2G Features


a continuous drain current (ID) of 58A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 56 ns


APL502B2G Applications


There are a lot of Microsemi Corporation
APL502B2G applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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