AOU4S60

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Series :

aMOS™

Published :

2010

Drain to Source Voltage (Vdss) :

600V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

4A

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Avalanche Energy Rating (Eas) :

77 mJ

DS Breakdown Voltage-Min :

600V

Drain Current-Max (Abs) (ID) :

4A

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Pulsed Drain Current-Max (IDM) :

16A

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Mounting Type :

Through Hole

Pin Count :

3

Terminal Position :

Single

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.9Ohm

Factory Lead Time :

16 Weeks

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Number of Elements :

1

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Through Hole

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

900m Ω @ 2A, 10V

Vgs(th) (Max) @ Id :

4.1V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

263pF @ 100V

JESD-30 Code :

R-PSIP-T3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Vgs (Max) :

±30V

Transistor Application :

SWITCHING

Number of Terminations :

3

Power Dissipation-Max :

56.8W Tc