AOU4N60

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Factory Lead Time :

16 Weeks

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

Published :

2010

Current - Continuous Drain (Id) @ 25°C :

4A Tc

Transistor Element Material :

SILICON

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

14.5nC @ 10V

RoHS Status :

ROHS3 Compliant

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Number of Elements :

1

Drain Current-Max (Abs) (ID) :

4A

Continuous Drain Current (ID) :

4A

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

600V

Pin Count :

3

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSIP-T3

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

4.5V @ 250μA

Operating Temperature :

-50°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

2.3 Ω @ 2A, 10V

Power Dissipation-Max :

104W Tc

Packaging :

Tube

Avalanche Energy Rating (Eas) :

235 mJ

Transistor Application :

SWITCHING