AOT25S65L
- Mfr.Part #
- AOT25S65L
- Manufacturer
- Alpha and Omega Semiconductor, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 25A TO220
- Stock
- 69,486
- In Stock :
- 69,486
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- Manufacturer :
- Alpha and Omega Semiconductor, Inc.
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JESD-30 Code :
- R-PSFM-T3
- Drain-source On Resistance-Max :
- 0.19Ohm
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Pulsed Drain Current-Max (IDM) :
- 104A
- Terminal Finish :
- Tin (Sn)
- FET Type :
- N-Channel
- Operating Temperature :
- -55°C~150°C TJ
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Drain to Source Voltage (Vdss) :
- 650V
- Published :
- 2010
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Gate Charge (Qg) (Max) @ Vgs :
- 26.4nC @ 10V
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Terminal Position :
- Single
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1278pF @ 100V
- Series :
- aMOS™
- Vgs (Max) :
- ±30V
- Avalanche Energy Rating (Eas) :
- 750 mJ
- DS Breakdown Voltage-Min :
- 650V
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 12.5A, 10V
- RoHS Status :
- ROHS3 Compliant
- Reach Compliance Code :
- not_compliant
- Power Dissipation-Max :
- 357W Tc
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-220-3
- Continuous Drain Current (ID) :
- 25A
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Factory Lead Time :
- 18 Weeks
- JESD-609 Code :
- e3
- Datasheets
- AOT25S65L
AOT25S65L Documents
N-Channel Tube 190m Ω @ 12.5A, 10V ±30V 1278pF @ 100V 26.4nC @ 10V 650V TO-220-3
AOT25S65L Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 750 mJ.A device's maximum input capacitance is 1278pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 25A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its maximum pulsed drain current is 104A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 650V.To operate this transistor, you need to apply a 650V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.
AOT25S65L Features
the avalanche energy rating (Eas) is 750 mJ
a continuous drain current (ID) of 25A
based on its rated peak drain current 104A.
a 650V drain to source voltage (Vdss)
AOT25S65L Applications
There are a lot of Alpha & Omega Semiconductor Inc.
AOT25S65L applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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