AOT25S65L

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Rds On (Max) @ Id, Vgs :

190m Ω @ 12.5A, 10V

Terminal Finish :

Tin (Sn)

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Factory Lead Time :

18 Weeks

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1278pF @ 100V

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Mount :

Through Hole

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

104A

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Number of Terminations :

3

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Avalanche Energy Rating (Eas) :

750 mJ

Configuration :

SINGLE WITH BUILT-IN DIODE

JEDEC-95 Code :

TO-220AB

Drain to Source Voltage (Vdss) :

650V

Series :

aMOS™

Continuous Drain Current (ID) :

25A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Power Dissipation-Max :

357W Tc

Drain-source On Resistance-Max :

0.19Ohm

ECCN Code :

EAR99

JESD-30 Code :

R-PSFM-T3

Published :

2010

DS Breakdown Voltage-Min :

650V

Vgs (Max) :

±30V

Mounting Type :

Through Hole

Reach Compliance Code :

not_compliant

Packaging :

Tube

Terminal Position :

Single

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

26.4nC @ 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V