AOT20S60L

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

266W Tc

Lead Free :

Lead Free

Continuous Drain Current (ID) :

20A

Current - Continuous Drain (Id) @ 25°C :

20A Tc

DS Breakdown Voltage-Min :

600V

Gate Charge (Qg) (Max) @ Vgs :

19.8nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1038pF @ 100V

Mounting Type :

Through Hole

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

80A

Vgs(th) (Max) @ Id :

4.1V @ 250μA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Elements :

1

Series :

aMOS™

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Rds On (Max) @ Id, Vgs :

199m Ω @ 10A, 10V

Drain to Source Voltage (Vdss) :

600V

Transistor Application :

SWITCHING

Packaging :

Tube

FET Type :

N-Channel

Published :

2010

Package / Case :

TO-220-3

Factory Lead Time :

16 Weeks

Number of Terminations :

3

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED