AON6946

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

485pF @ 15V

Pulsed Drain Current-Max (IDM) :

64A

Published :

2011

Power - Max :

3.5W 3.9W

Transistor Application :

SWITCHING

Configuration :

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

11.6m Ω @ 13A, 10V

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN SOURCE

Factory Lead Time :

18 Weeks

Terminal Form :

Flat

Number of Elements :

2

Terminal Position :

Dual

Package / Case :

8-PowerVDFN

Transistor Element Material :

SILICON

Max Power Dissipation :

3.9W

Number of Pins :

8

Drain-source On Resistance-Max :

0.0116Ohm

Number of Terminations :

6

Drain to Source Voltage (Vdss) :

30V

JESD-30 Code :

R-PDSO-F6

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 10V

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

9 mJ

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

18A

FET Type :

2 N-Channel (Half Bridge)

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain Current-Max (Abs) (ID) :

16A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

14A 18A

DS Breakdown Voltage-Min :

30V

FET Feature :

Logic Level Gate