AON6912A

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Gate to Source Voltage (Vgs) :

20V

FET Type :

2 N-Channel (Half Bridge)

Power - Max :

1.9W 2.1W

Rds On (Max) @ Id, Vgs :

13.7m Ω @ 10A, 10V

Package / Case :

8-PowerVDFN

Factory Lead Time :

18 Weeks

Number of Elements :

2

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

13.8A

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2011

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Number of Pins :

8

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 15V

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

10A 13.8A

Max Power Dissipation :

2.1W

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Mounting Type :

Surface Mount