AOE6932

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Arrays

Case Connection :

SOURCE

Number of Terminations :

8

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

15nC @ 4.5V, 50nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Mounting Type :

Surface Mount

Factory Lead Time :

18 Weeks

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power - Max :

24W 52W

Configuration :

SERIES, 2 ELEMENTS WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

120A

Surface Mount :

yes

DS Breakdown Voltage-Min :

30V

Drain to Source Voltage (Vdss) :

30V

Vgs(th) (Max) @ Id :

2.2V @ 250μA, 1.9V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

1150pF @ 15V 4180pF @ 15V

RoHS Status :

ROHS3 Compliant

Terminal Form :

NO LEAD

Package / Case :

8-VDFN Exposed Pad

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

18 mJ

Drain-source On Resistance-Max :

0.008Ohm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

55A

Number of Elements :

2

JESD-30 Code :

R-PDSO-N8

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

5m Ω @ 20A, 10V, 1.4m Ω @ 20A, 10V

Packaging :

Tape and Reel (TR)

FET Type :

2 N-Channel (Dual) Asymmetrical

Current - Continuous Drain (Id) @ 25°C :

55A Tc 85A Tc