AOB25S65L

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Drain-source On Resistance-Max :

0.19Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

26.4nC @ 10V

Power Dissipation-Max :

357W Tc

Input Capacitance (Ciss) (Max) @ Vds :

1278pF @ 100V

Terminal Position :

Single

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

650V

DS Breakdown Voltage-Min :

650V

Vgs (Max) :

±30V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

aMOS™

FET Type :

N-Channel

Continuous Drain Current (ID) :

25A

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Factory Lead Time :

18 Weeks

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pulsed Drain Current-Max (IDM) :

104A

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

750 mJ

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

190m Ω @ 12.5A, 10V

Terminal Form :

Gull wing

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Elements :

1

Published :

2011

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)