AOB20S60L

Manufacturer :

Alpha and Omega Semiconductor, Inc.

Product Category :

Transistors - FETs, MOSFETs - Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

aMOS™

Drain to Source Voltage (Vdss) :

600V

Published :

2011

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Configuration :

SINGLE WITH BUILT-IN DIODE

Case Connection :

DRAIN

Vgs (Max) :

±30V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

600V

Power Dissipation-Max :

266W Tc

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

1038pF @ 100V

Transistor Application :

SWITCHING

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

199m Ω @ 10A, 10V

Gate Charge (Qg) (Max) @ Vgs :

19.8nC @ 10V

Pulsed Drain Current-Max (IDM) :

80A

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Number of Terminations :

2

Mounting Type :

Surface Mount

Terminal Position :

Single

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Operating Temperature :

-55°C~150°C TJ

Terminal Form :

Gull wing

Mount :

Surface Mount

Continuous Drain Current (ID) :

20A

Vgs(th) (Max) @ Id :

4.1V @ 250μA